, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistors d44c series description ?with to-220 package ?complement to type d45c series ?very low collector saturation voltage ?fast switching applications ?designed for various specific and general purpose application ?shunt and switching regulators ?low and high frequency inverters converters and etc. pinning pin 1 2 3 description base collector;connected to mounting base emitter ,, 123 fig.1 simplified outline (to-220c) .nul symbol absolute maximum ratings (ta=25 ) symbol vcbo vceo vebo ic icm ib pd t, 'stg parameter collector-base voltage collector-emitter voltage D44C1,2,3 d44c4,5,6 d44c7,8,9 D44C10,11,12 D44C1,2,3 d44c4,5,6 d44c7,8,9 D44C10,11,12 emitter-base voltage collector current (dc) collector current -peak base current (dc) total power dissipation junction temperature storage temperature conditions open emitter open base open collector tc=25 value 40 55 70 90 30 45 60 80 5 4 6 1 30 150 -55-150 unit v v v a a a w qualiry semi-conductors
silicon npn power transistors d44c series characteristics tj=25 unless otherwise specified symbol vcesa, veesat ices iebo hpe-1 hfe-2 fr parameter collector-emitter saturation voltage d44c2, 3,5,6,8,9,11, 12 D44C1,4,7,10 base-emitter saturation voltage collector cut-off current emitter cut-off current dc current gain dc current gain d44c3,6,9,12 d44c2, 5,8,11 D44C1,4,7,10 D44C1,4,7,10 d44c2, 3, 5,6,8,9,11, 12 transition frequency conditions lc=1a;lb=50ma ic=1a;ib=0.1a ic=1a;ib=0.1a vce=rated vces; veb=5v; lc=0 lc=0.2a;vce=1v lc=1a;vce=1v lc=2a;vce=1v lc=20ma;vce=4v; f=1.0mhz min 40 100 25 10 20 typ. 50 max 0.5 1.3 100 10 120 220 unit v v ma ma mhz switching times tr ts tf rise time storage time fall time lc=1.0a;vcc=20v ib1=-ib2=0.1a 0.3 0.7 0.4 ms ms us
silicon npn power transistors d44c series package outline ?id mi 1 p^sj tii. t 300*0.01 280 a.oo 3.75 830 13.00 0.45 l3s 1580 1.20 -i ug ., us u] cm o! ?* no 508 2.60
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